Title :
Diffusion of transition elements in GaAs and InP
Author :
Brozel, M.R. ; Tuck, B. ; Foulkes, E.J.
Author_Institution :
University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
Abstract :
A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.
Keywords :
III-V semiconductors; chromium; diffusion in solids; gallium arsenide; indium compounds; iron; semiconductor doping; Cr diffusion; Fe diffusion; GaAs; InP; diffusion of transition elements; semiconductor doping;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810372
