• DocumentCode
    972129
  • Title

    Diffusion of transition elements in GaAs and InP

  • Author

    Brozel, M.R. ; Tuck, B. ; Foulkes, E.J.

  • Author_Institution
    University of Nottingham, Department of Electrical & Electronic Engineering, Nottingham, UK
  • Volume
    17
  • Issue
    15
  • fYear
    1981
  • Firstpage
    532
  • Lastpage
    533
  • Abstract
    A technique is presented for studying the diffusion of iron and chromium in GaAs and InP at temperatures down to 600°C. The technique is reproducible, and results are presented which show that in all four cases very fast diffusion occurs.
  • Keywords
    III-V semiconductors; chromium; diffusion in solids; gallium arsenide; indium compounds; iron; semiconductor doping; Cr diffusion; Fe diffusion; GaAs; InP; diffusion of transition elements; semiconductor doping;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810372
  • Filename
    4245846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972129