Title :
A new planar-structure InAlGaAs-InAlAs superlattice avalanche photodiode with a Ti-implanted guard-ring
Author :
Watanabe, I. ; Tsuji, M. ; Makita, K. ; Taguchi, K.
Author_Institution :
Optoelectron. Res. Labs., NEC Corp., Tsukuba, Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
High-speed quasi-planar-structure InAlGaAs-InAlAs superlattice avalanche photodiodes (SL-APDs) have been fabricated with a newly proposed Ti-implanted guard-ring. The APDs exhibited a uniform multiplication profile at a multiplication factor of 50 with no edge-multiplication. The dark current was 2.2 μA at a multiplication factor of 10. High-speed response characteristics were confirmed with a gain-bandwidth product of 110 GHz and a high cut-off frequency of 15 GHz, even at a low multiplication factor of 1.5. These characteristics are the first demonstration of planar-structure SL-APDs for 10 Gb/s optical receivers use.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; dark conductivity; gallium arsenide; high-speed optical techniques; indium compounds; ion implantation; optical fabrication; optical receivers; semiconductor superlattices; 10 Gbit/s; 15 GHz; 2.2 muA; Gb/s optical receivers; InAlGaAs-InAlAs; Ti; Ti-implanted guard-ring; dark current; gain-bandwidth product; high cut-off frequency; high-speed quasi-planar-structure; high-speed response characteristics; low multiplication factor; multiplication factor; planar-structure InAlGaAs-InAlAs superlattice avalanche photodiode; planar-structure SL-APDs; uniform multiplication profile; Absorption; Avalanche photodiodes; Cutoff frequency; Dark current; Indium compounds; Indium gallium arsenide; Indium phosphide; Optical fiber communication; Optical receivers; Superlattices;
Journal_Title :
Photonics Technology Letters, IEEE
