Title :
Gas-phase selective etching of native oxide
Author :
Miki, Nobuhiro ; Kikuyama, Hirohisa ; Kawanabe, Ichiroh ; Miyashita, Masayuki ; Ohmi, Tadahiro
Author_Institution :
Hashimoto Chem. Ltd., Osaka, Japan
fDate :
1/1/1990 12:00:00 AM
Abstract :
Gas-phase selective etching of native oxide film formed on a silicon surface is an essential requirement for ULSI process technologies. Ultraclear anhydrous hydrogen fluoride (AHF) gas and a corrosion-free system were developed for this etching process. The reaction mechanism of silicon oxide film with moistureless HF was investigated, and selective etching conditions were developed. The gas-phase selective etching of native oxide in an environment of strictly controlled AHF concentration in N2 is described
Keywords :
elemental semiconductors; etching; oxidation; semiconductor technology; silicon; N2; N2-HF; Si surface; ULSI process technologies; anhydrous HF; corrosion-free system; gas-phase selective etching; native oxide film; reaction mechanism; strictly controlled environment; ultraclear anhydrous hydrogen fluoride gas; Cleaning; Dry etching; Hafnium; Organic materials; Semiconductor films; Silicon; Surface contamination; Surface treatment; Temperature; Ultra large scale integration;
Journal_Title :
Electron Devices, IEEE Transactions on
