• DocumentCode
    972131
  • Title

    Gas-phase selective etching of native oxide

  • Author

    Miki, Nobuhiro ; Kikuyama, Hirohisa ; Kawanabe, Ichiroh ; Miyashita, Masayuki ; Ohmi, Tadahiro

  • Author_Institution
    Hashimoto Chem. Ltd., Osaka, Japan
  • Volume
    37
  • Issue
    1
  • fYear
    1990
  • fDate
    1/1/1990 12:00:00 AM
  • Firstpage
    107
  • Lastpage
    115
  • Abstract
    Gas-phase selective etching of native oxide film formed on a silicon surface is an essential requirement for ULSI process technologies. Ultraclear anhydrous hydrogen fluoride (AHF) gas and a corrosion-free system were developed for this etching process. The reaction mechanism of silicon oxide film with moistureless HF was investigated, and selective etching conditions were developed. The gas-phase selective etching of native oxide in an environment of strictly controlled AHF concentration in N2 is described
  • Keywords
    elemental semiconductors; etching; oxidation; semiconductor technology; silicon; N2; N2-HF; Si surface; ULSI process technologies; anhydrous HF; corrosion-free system; gas-phase selective etching; native oxide film; reaction mechanism; strictly controlled environment; ultraclear anhydrous hydrogen fluoride gas; Cleaning; Dry etching; Hafnium; Organic materials; Semiconductor films; Silicon; Surface contamination; Surface treatment; Temperature; Ultra large scale integration;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43806
  • Filename
    43806
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972131