Title :
A laser-recrystallization technique for silicon-TFT integrated circuits on quartz substrates and its application to small-size monolithic active-matrix LCD´s
Author :
Fujii, Eiji ; Senda, Kohji ; Emoto, Fumiaki ; Yamamoto, Atsuya ; Nakamura, Akira ; Uemoto, Yasuhiro ; Kano, Gota
Author_Institution :
Matsushita Electron. Corp., Osaka, Japan
fDate :
1/1/1990 12:00:00 AM
Abstract :
The laser-recrystallization technique utilizes the connected-island structure for forming recrystallized silicon films with enlarged grain size controlled by the thermal gradient. This technique has been used to fabricate the driver circuits of small-size monolithic active-matrix liquid-crystal displays. A horizontal driver circuit with partially recrystallized silicon thin-film transistors (TFTs) has been successfully fabricated on quartz substrates, together with a vertical driver and active-matrix TFT circuits. The operating frequency of the fabricated horizontal driver circuits can be as high as 10 MHz under a clock voltage of 5 V
Keywords :
driver circuits; elemental semiconductors; field effect integrated circuits; integrated circuit technology; laser beam annealing; liquid crystal displays; recrystallisation; silicon; thin film transistors; 10 MHz; 5 V; Si-SiO2; SiO2; active-matrix TFT circuits; clock voltage; connected-island structure; driver circuits; grain size; laser-recrystallization technique; operating frequency; quartz substrates; recrystallized silicon films; silicon-TFT integrated circuits; small-size monolithic active-matrix liquid-crystal displays; thermal gradient; vertical driver TFT circuits; Active matrix liquid crystal displays; Active matrix technology; Driver circuits; Grain size; Optical control; Semiconductor films; Silicon; Size control; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
