• DocumentCode
    972158
  • Title

    New high-speed bipolar XOR gate with absolutely symmetrical circuit configuration

  • Author

    Schmidt, L. ; Rein, H.M.

  • Author_Institution
    Ruhr Univ. Bochum, West Germany
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    430
  • Lastpage
    431
  • Abstract
    A new monolithic integrated exclusive OR gate (XOR) in E2CL circuit design is presented. The symmetry with respect to both inputs makes it superior to the standard XOR gates in ECL or E2CL for several applications. The circuit was realised using a conservative 2 mu m standard silicon bipolar technology.
  • Keywords
    bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; 2 micron; E 2CL circuit design; absolutely symmetrical circuit configuration; high-speed bipolar XOR gate; monolithic integrated exclusive OR gate; silicon bipolar technology;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900279
  • Filename
    50211
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972158