Title :
New high-speed bipolar XOR gate with absolutely symmetrical circuit configuration
Author :
Schmidt, L. ; Rein, H.M.
Author_Institution :
Ruhr Univ. Bochum, West Germany
fDate :
3/29/1990 12:00:00 AM
Abstract :
A new monolithic integrated exclusive OR gate (XOR) in E2CL circuit design is presented. The symmetry with respect to both inputs makes it superior to the standard XOR gates in ECL or E2CL for several applications. The circuit was realised using a conservative 2 mu m standard silicon bipolar technology.
Keywords :
bipolar integrated circuits; emitter-coupled logic; integrated logic circuits; logic gates; 2 micron; E 2CL circuit design; absolutely symmetrical circuit configuration; high-speed bipolar XOR gate; monolithic integrated exclusive OR gate; silicon bipolar technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900279
