• DocumentCode
    972172
  • Title

    Exponential bidirectional associative memories

  • Author

    Jeng, Y.-J. ; Yeh, C.C. ; Chiveh, T.D.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    717
  • Lastpage
    718
  • Abstract
    A bidirectional associative memory (BAM) with an exponential nonlinearity is presented. This method has the advantage of exponential strategy. It improves the performance of the BAM. An energy function that decreases as the memory state changes can be defined, ensuring the stability of the system.
  • Keywords
    VLSI; content-addressable storage; integrated memory circuits; neural nets; bidirectional associative memory; energy function; exponential bidirectional associative memories; exponential nonlinearity; exponential strategy; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900468
  • Filename
    106037
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972172