Title :
Low-noise two-dimensional electron gas FET
Author :
Laviron, M. ; Delagebeaudeuf, D. ; Delescluse, P. ; Chaplart, J. ; Linh, N.T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Two-dimensional electron gas FETs (TEGFETs) have been fabricated on an N-AlGaAs-GaAs heterojunction. Microwave results at 10 GHz are: NF=2.3 dB, Gass=10.3 dB and Gmax=13.2 dB. These first results obtained on nonoptimised material and processing suggest that TEGFET can be superior to a conventional GaAs FET.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron device noise; electron gas; gallium arsenide; solid-state microwave devices; 10 GHz; MESFET; TEGFET; microwave properties; n-AlGaAs-GaAs heterojunction; noise figure; two-dimensional electron gas FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810375
