DocumentCode
972199
Title
Si/a-Si:H heterojunction microwave bipolar transistors with cut-off frequencies f t above 5 GHz
Author
Wang, Yin-Sheng ; Sheng, Wen-wei ; Xiong, Cheng-kun ; Zhu, En-jun ; Zhang, Xiao-ming ; Wang, Jian-yuan ; Mao, Kun-chun
Author_Institution
Device Res. Lab., Nanjing Electron. Devices Inst., China
Volume
37
Issue
1
fYear
1990
fDate
1/1/1990 12:00:00 AM
Firstpage
153
Lastpage
158
Abstract
The fabrication of a silicon heterojunction microwave bipolar transistor with an n+ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 kΩ/□ a base width 0.1 μm, a maximum current gain of 21 (V CE=6 V, I c=15 mA), and an emitter Gummel number G E of about 1.4×1014 Scm-4. From the measured S parameters, a cutoff frequency f t of 5.5 GHz and maximum oscillating frequency f max of 7.5 GHz at V CE=10 V, I c=10 mA are obtained
Keywords
S-parameters; amorphous semiconductors; elemental semiconductors; heterojunction bipolar transistors; hydrogen; silicon; solid-state microwave devices; 10 V; 10 mA; 15 mA; 5.5 GHz; 6 V; 7.5 GHz; S parameters; Si-Si:H heterojunction microwave bipolar transistors; base sheet resistance; cut-off frequencies; emitter Gummel number GE; maximum current gain; maximum oscillating frequency; n+ a-Si:H emitter; Amorphous silicon; Bipolar transistors; Cutoff frequency; Electrical resistance measurement; Fabrication; Frequency measurement; Heterojunction bipolar transistors; Microwave devices; Microwave transistors; Photonic band gap;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43812
Filename
43812
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