Title :
Si/a-Si:H heterojunction microwave bipolar transistors with cut-off frequencies ft above 5 GHz
Author :
Wang, Yin-Sheng ; Sheng, Wen-wei ; Xiong, Cheng-kun ; Zhu, En-jun ; Zhang, Xiao-ming ; Wang, Jian-yuan ; Mao, Kun-chun
Author_Institution :
Device Res. Lab., Nanjing Electron. Devices Inst., China
fDate :
1/1/1990 12:00:00 AM
Abstract :
The fabrication of a silicon heterojunction microwave bipolar transistor with an n+ a-Si:H emitter is discussed, and experimental results are given. The device provides a base sheet resistance of 2 kΩ/□ a base width 0.1 μm, a maximum current gain of 21 (VCE=6 V, Ic=15 mA), and an emitter Gummel number G E of about 1.4×1014 Scm-4. From the measured S parameters, a cutoff frequency ft of 5.5 GHz and maximum oscillating frequency fmax of 7.5 GHz at VCE=10 V, Ic=10 mA are obtained
Keywords :
S-parameters; amorphous semiconductors; elemental semiconductors; heterojunction bipolar transistors; hydrogen; silicon; solid-state microwave devices; 10 V; 10 mA; 15 mA; 5.5 GHz; 6 V; 7.5 GHz; S parameters; Si-Si:H heterojunction microwave bipolar transistors; base sheet resistance; cut-off frequencies; emitter Gummel number GE; maximum current gain; maximum oscillating frequency; n+ a-Si:H emitter; Amorphous silicon; Bipolar transistors; Cutoff frequency; Electrical resistance measurement; Fabrication; Frequency measurement; Heterojunction bipolar transistors; Microwave devices; Microwave transistors; Photonic band gap;
Journal_Title :
Electron Devices, IEEE Transactions on
