DocumentCode :
972215
Title :
Picosecond pulse generation by lateral mode switching of (GaAl)As-heterostructure stripe lasers
Author :
White, Ian H. ; Aspin, G.J. ; Carroll, J.E. ; Plumb, R.G.
Author_Institution :
Cambridge University, Engineering Department, Cambridge, UK
Volume :
17
Issue :
15
fYear :
1981
Firstpage :
541
Lastpage :
543
Abstract :
The presence of `kinks¿ in the light/current characteristics of (GaAl)As injection lasers is investigated by applying large amplitude electrical RF modulation. It is suggested that the 20 ps pulses which have been observed may be produced through mechanisms associated with these kinks.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser modes; optical modulation; semiconductor junction lasers; (GaAl)As injection lasers; heterostructure stripe lasers; kinks; large amplitude electrical RF modulation; lateral mode switching; light/current characteristics; picosecond pulse generation; semiconductor laser;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810379
Filename :
4245853
Link To Document :
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