DocumentCode
972286
Title
Interdiffusion in titanium permalloy thin films
Author
Chow, L.G. ; Decker, S.K. ; Pocker, D.J. ; Pendley, G.C. ; Papadopoulos, J.
Author_Institution
IBM General Products Division, San Jose, California
Volume
15
Issue
6
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1833
Lastpage
1835
Abstract
This paper presents the results of investigation of interdiffusion in titanium permalloy thin film. It is found that interdiffusion in titanium-permalloy thin films is very detrimental to the magnetic properties of permalloy. Severe interdiffusion can take place with composite Ti/NiFe film annealed at 250°C for 90 minutes. Auger Analysis indicates the diffusion mechanism involves mainly Ni loss from the permalloy layer and diffusion into the Ti layer. Atmospheric exposure of the Ti layer before NiFe deposition can effectively control the interdiffusion process and prevent loss of magnetoresistive response. The x-ray diffraction data has indicated the formation of a Ni-Ti alloy to which may be attributed the degradation of the magnetic properties of Permalloy.
Keywords
Permalloy films/devices; Titanium materials/devices; Annealing; Magnetic analysis; Magnetic films; Magnetic losses; Magnetic properties; Magnetoresistance; Process control; Titanium; Transistors; X-ray diffraction;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060379
Filename
1060379
Link To Document