• DocumentCode
    972286
  • Title

    Interdiffusion in titanium permalloy thin films

  • Author

    Chow, L.G. ; Decker, S.K. ; Pocker, D.J. ; Pendley, G.C. ; Papadopoulos, J.

  • Author_Institution
    IBM General Products Division, San Jose, California
  • Volume
    15
  • Issue
    6
  • fYear
    1979
  • fDate
    11/1/1979 12:00:00 AM
  • Firstpage
    1833
  • Lastpage
    1835
  • Abstract
    This paper presents the results of investigation of interdiffusion in titanium permalloy thin film. It is found that interdiffusion in titanium-permalloy thin films is very detrimental to the magnetic properties of permalloy. Severe interdiffusion can take place with composite Ti/NiFe film annealed at 250°C for 90 minutes. Auger Analysis indicates the diffusion mechanism involves mainly Ni loss from the permalloy layer and diffusion into the Ti layer. Atmospheric exposure of the Ti layer before NiFe deposition can effectively control the interdiffusion process and prevent loss of magnetoresistive response. The x-ray diffraction data has indicated the formation of a Ni-Ti alloy to which may be attributed the degradation of the magnetic properties of Permalloy.
  • Keywords
    Permalloy films/devices; Titanium materials/devices; Annealing; Magnetic analysis; Magnetic films; Magnetic losses; Magnetic properties; Magnetoresistance; Process control; Titanium; Transistors; X-ray diffraction;
  • fLanguage
    English
  • Journal_Title
    Magnetics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9464
  • Type

    jour

  • DOI
    10.1109/TMAG.1979.1060379
  • Filename
    1060379