DocumentCode
972313
Title
High-performance millimetrewave GaAs Schottky-barrier flip-chip diode
Author
Setzer, C.S. ; Mattauch, R.J.
Author_Institution
Maharishi International University, Physics Department, Fairfield, USA
Volume
17
Issue
16
fYear
1981
Firstpage
555
Lastpage
557
Abstract
Theoretical and experimental results reveal a novel flip-chip structure which allows attainment of both parasitic and internal device element values comparable with, or even superior to, the ultrasensitive whisker-contact Schottky-diode structure. Preliminary results with neither device nor choke structure matched to mixer block show LDSB<10 dB, Tmix approximately 2000 K (91 GHz, 300 K).
Keywords
III-V semiconductors; Schottky-barrier diodes; flip-chip devices; gallium arsenide; solid-state microwave devices; III-V semiconductors; MM wave GaAs Schottky-barrier flip-chip diode; ultrasensitive whisker-contact Schottky-diode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810389
Filename
4245864
Link To Document