Title :
High-performance millimetrewave GaAs Schottky-barrier flip-chip diode
Author :
Setzer, C.S. ; Mattauch, R.J.
Author_Institution :
Maharishi International University, Physics Department, Fairfield, USA
Abstract :
Theoretical and experimental results reveal a novel flip-chip structure which allows attainment of both parasitic and internal device element values comparable with, or even superior to, the ultrasensitive whisker-contact Schottky-diode structure. Preliminary results with neither device nor choke structure matched to mixer block show LDSB<10 dB, Tmix approximately 2000 K (91 GHz, 300 K).
Keywords :
III-V semiconductors; Schottky-barrier diodes; flip-chip devices; gallium arsenide; solid-state microwave devices; III-V semiconductors; MM wave GaAs Schottky-barrier flip-chip diode; ultrasensitive whisker-contact Schottky-diode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810389
