DocumentCode
972325
Title
A Voltage-Sensitive Switch
Author
Otley, K.O. ; Shoemaker, R.F. ; Franklin, P.J.
Author_Institution
Diamond Ordnance Fuze Labs., Washington, D.C.
Volume
46
Issue
10
fYear
1958
Firstpage
1723
Lastpage
1730
Abstract
An investigation of the controlled dielectric breakdown of aluminum oxide films resulted in the development of a voltage-sensitive switch which may replace thyratrons and gas diodes in circuits which require single switching from a resistance in the kilomegohm range to one of the order of 1 ohm or less. Compared with a thyratron, the switch is smaller, less expensive, more resistant to shock, vibration and high-energy radiation, and requires no additional power supply. In a recent batch, all samples tested broke down between 12 and 13 volts dc. Three circuits are presented which show applications of the switch in a time delay, in a series arrangement, and in a biasing network where terminal voltage is greater than the critical breakdown voltage of the switch.
Keywords
Aluminum oxide; Breakdown voltage; Dielectric breakdown; Diodes; Electric shock; Power supplies; Switches; Switching circuits; Thyratrons; Voltage control;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1958.286751
Filename
4065282
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