Deep submicron CMOS based on silicon germanium technology

Author

O´Neill, A.G. ; Antoniadis, D.A.

Author_Institution

Microsyst. Technol. Lab., MIT, Cambridge, MA, USA

Volume

43

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

911

Lastpage

918

Abstract

The advantages to be gained by using SiGe in CMOS technology are examined, Conventional MOSFETs are compared with SiGe heterojunction MOSFETs suitable for CMOS technology and having channel lengths between 0.5 and 0.1 μm. Two-dimensional computer simulation demonstrates that the improved mobility in the SiGe devices, due to higher bulk mobility and the elimination of Si/SiO₂ interface scattering by the inclusion of a capping layer, results in significant velocity overshoot close to the source-end of the channel. The cut-off frequency, f_t, is found to increase by around 50% for n-channel devices while more than doubling for p-channel devices for typical estimates of mobility. The results offer the prospect of a more balanced CMOS and improved circuit speed especially when using dynamic logic

Keywords

CMOS integrated circuits; Ge-Si alloys; ULSI; carrier mobility; digital simulation; integrated circuit modelling; semiconductor materials; 0.1 to 0.5 micron; SiGe; bulk mobility; capping layer; channel lengths; circuit speed; cut-off frequency; deep submicron CMOS; dynamic logic; heterojunction MOSFET; n-channel devices; p-channel devices; two-dimensional computer simulation; velocity overshoot; CMOS logic circuits; CMOS technology; Computer simulation; Cutoff frequency; Frequency estimation; Germanium silicon alloys; Heterojunctions; MOSFETs; Scattering; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.502123

Filename

502123