• DocumentCode
    972328
  • Title

    Temperature dependence of the Gunn threshold in GaAs

  • Author

    Adams, A.R. ; Tatham, H.L.

  • Author_Institution
    University of Surrey, Physics Department, Guildford, UK
  • Volume
    17
  • Issue
    16
  • fYear
    1981
  • Firstpage
    557
  • Lastpage
    558
  • Abstract
    Measurement of the temperature dependence of the threshold for transferred electron instabilities in GaAs gives (1/IP(300))×(dIP/dT=¿2.4±0.2×10¿3 K¿1, independent of carrier concentration The threshold field decreases with decreasing T and depends on carrier concentration. Reasonable agreement is obtained with Monte Carlo calculations based on ¿-L-X ordering.
  • Keywords
    Gunn effect; III-V semiconductors; Monte Carlo methods; gallium arsenide; GaAs; Gunn threshold; Monte Carlo calculations; carrier concentration; temperature dependence; transferred electron instabilities;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810390
  • Filename
    4245865
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972328