• DocumentCode
    972338
  • Title

    Thermally robust Ta2O5 capacitor for the 256-Mbit DRAM

  • Author

    Kwon, Kee-Won ; Kang, Chang-Seok ; Park, Soon Oh ; Kang, Ho-Kyu ; Ahn, Sung Tae

  • Author_Institution
    Semicond. R&D Centre, Samsung Electron. Co., Kyungki, South Korea
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    919
  • Lastpage
    923
  • Abstract
    The thermal degradation of the Ta2 O5 capacitor during BPSG reflow has been studied. The cause of deterioration of Ta2O5 with the TiN top electrode was found to be the oxidation of TiN. By placing a poly-Si layer between TiN and BPSG to suppress oxidation, the low leakage current level was maintained after BPSG reflow at 850°C. The Ta2O5 capacitor with the TiN/poly-Si top electrode was integrated into 256-Mbit DRAM cells and excellent leakage current characteristics were obtained
  • Keywords
    DRAM chips; capacitors; integrated circuit reliability; leakage currents; phosphosilicate glasses; silicon; tantalum compounds; titanium compounds; 256 Mbit; 850 degC; BPSG reflow; DRAM cells; Si-Ta2O5-TiN-B2O3-P2O5-SiO2; Si-Ta2O5-TiN-BPSG; leakage current level; polysilicon layer; thermal degradation; Annealing; Capacitors; Electrodes; Leakage current; Plasma measurements; Plasma temperature; Random access memory; Robustness; Thermal degradation; Tin;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.502124
  • Filename
    502124
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972338