Observation of single interface traps in submicron MOSFET´s by charge pumping

Author

Groeseneken, Guido V. ; de Wolf, Ingrid ; Bellens, Rudi ; Maes, Herman E.

Author_Institution

IMEC, Leuven, Belgium

Volume

43

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

940

Lastpage

945

Abstract

The observation of single interface traps in small area MOSFET´s by charge pumping is demonstrated for the first time, The dependence of the single trap charge pumping current on the base level voltage is described, Also the creation of one single interface trap under influence of low level hot carrier injection is demonstrated. A prediction of the charge pumping current behavior as a function of rise and fall time and temperature for the case of individual traps is made. The correlation with RTS-noise experiments is discussed

Keywords

MOSFET; electron density; hot carriers; interface states; semiconductor device noise; 0.5 mum; CMOS technology; RTS-noise experiments; base level voltage; charge pumping; drain current noise; electron concentration; fall time; low level hot carrier injection; rise time; single interface traps; submicron MOSFET; temperature dependence; Charge pumps; Electron traps; Frequency; Geometry; Hot carrier injection; Ionizing radiation; MOSFET circuits; Temperature; Transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.502127

Filename

502127