• DocumentCode
    972392
  • Title

    Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel

  • Author

    Han Dejun

  • Author_Institution
    Inst. of Microelectron., Peking Univ., China
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    432
  • Lastpage
    434
  • Abstract
    A novel lateral nonuniform doping technique, which is compatible with conventional ion implantation technology, is reported. GaAs MESFETs with a linear lateral doping channel have been fabricated and improvements in performance have been demonstrated.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; semiconductor doping; GaAs; MESFETs; ion implantation technology; lateral linear doping channel; lateral nonuniform doping technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900281
  • Filename
    50213
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972392