Title :
Lateral nonuniform doping technique and its application to the fabrication of GaAs MESFETs with a lateral linear doping channel
Author_Institution :
Inst. of Microelectron., Peking Univ., China
fDate :
3/29/1990 12:00:00 AM
Abstract :
A novel lateral nonuniform doping technique, which is compatible with conventional ion implantation technology, is reported. GaAs MESFETs with a linear lateral doping channel have been fabricated and improvements in performance have been demonstrated.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; doping profiles; gallium arsenide; ion implantation; semiconductor doping; GaAs; MESFETs; ion implantation technology; lateral linear doping channel; lateral nonuniform doping technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900281
