Title :
Low-distortion CMOS transconductor
Author :
Wilson, G. ; Chan, P.K.
Author_Institution :
Sch. of Electr. Commun. & Electr. Eng., Polytech. South West, Plymouth, UK
fDate :
5/24/1990 12:00:00 AM
Abstract :
A new transconductor based on MOS transistors operating in saturation is proposed. Linearisation is achieved in a common-source pair by driving the devices in a purely anti-phase mode. Simulation results show that the proposed transconductor would typically exhibit less than 1% THD for inout signals up to 5.7 V.
Keywords :
CMOS integrated circuits; active networks; amplifiers; electric distortion; network synthesis; 5.7 V; MOS transistors operating in saturation; THD; VCCS; anti-phase mode; common-source pair; inout signals; linearisation; low distortion CMOS transconductor; simulation results;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900470
