DocumentCode :
972439
Title :
Failure of Matthiessen´s rule in the calculation of carrier mobility and alloy scattering effects in Ga0.47In0.53As
Author :
Takeda, Y. ; Pearsall, T.P.
Author_Institution :
North Carolina State University, Electrical Engineering Department, Raleigh, USA
Volume :
17
Issue :
16
fYear :
1981
Firstpage :
573
Lastpage :
574
Abstract :
Matthiessen´s rule is shown to be an unacceptable approximation to analyse the scattering mechanisms in semiconductors, especially when deriving the alloy scattering-limited mobility from the experimental data. The anomalous temperature dependence of the `alloy scattering-limited mobility¿ is caused by the failure of Matthiessen´s rule in the presence of competing scattering modes. The electron Hall mobility calculated using the iterative technique explains accurately the experimental data using a single model for the alloy scattering mechanism and the appropriate material parameters.
Keywords :
Hall effect; III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; Ga0.47In0.53As; Hall mobility; III-V semiconductors; Matthiessen´s rule; alloy scattering effects; carrier mobility; iterative technique;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810402
Filename :
4245877
Link To Document :
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