• DocumentCode
    972450
  • Title

    Modelling of dual-gate MESFETs with second gate forward biased

  • Author

    Chao, P.C. ; Ku, W.H.

  • Author_Institution
    Cornell University, School of Electrical Engineering, Ithaca, USA
  • Volume
    17
  • Issue
    16
  • fYear
    1981
  • Firstpage
    574
  • Lastpage
    576
  • Abstract
    Drain characteristics of dual-gate MESFETs with the second gate positively biased have been analysed on the basis of Pucel.s model. A diode in series with a resistor was proposed to model the positively biased gate. The simulated characteristics agree well with the experimental curves.
  • Keywords
    Schottky gate field effect transistors; semiconductor device models; diode; drain characteristics; dual-gate MESFETs; model; resistor; second gate forward biased; semiconductor device models;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810403
  • Filename
    4245878
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972450