Building-in ESD/EOS reliability for sub-halfmicron CMOS processes

Author

Díaz, Carlos H. ; Kopley, Thomas E. ; Marcoux, Paul.J.

Author_Institution

ULSI Res. Lab., Hewlett-Packard Co., Palo Alto, CA, USA

Volume

43

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

991

Lastpage

999

Abstract

MOSFET design in high performance CMOS technologies is driven primarily by performance requirements and reliability issues such as hot carrier degradation. These requirements generally lead to processes that are inherently weak in terms of ESD and EOS. This paper presents a case of building-in ESD/EOS reliability through nMOSFET drain design for a 0.35 μm CMOS process that compromises neither the performance nor the hot carrier reliability. Three process options were considered: nLDD or nDDD ESD implants, and a silicide-block option. The nDDD option for the I/O transistors was chosen as it complied with the performance and reliability (ESD and HCI) specifications and its implementation cost was lower than a silicide-block option. The paper presents data demonstrating the advantages of the nDDD solution over the other alternatives. Particularly, pulsed-EOS and HBM-ESD data, the impact of layout parameters on ESD performance, and hot-carrier data are reviewed

Keywords

CMOS integrated circuits; MOSFET; electrostatic discharge; hot carriers; integrated circuit layout; integrated circuit reliability; integrated circuit technology; ion implantation; 0.35 micron; ESD performance; ESD/EOS reliability; HBM-ESD data; built-in reliability; hot carrier data; hot carrier reliability; layout parameters; n-channel MOSFET design; nDDD ESD implant; nLDD ESD implant; nMOSFET drain design; pulsed-EOS data; silicide-block option; sub-halfmicron CMOS processes; CMOS process; CMOS technology; Degradation; Earth Observing System; Electrostatic discharge; Hot carriers; Human computer interaction; Implants; MOSFET circuits; Process design;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.502135

Filename

502135