• DocumentCode
    972475
  • Title

    Variation of diffused boron concentration in the neighbourhood of an oxide-masked edge

  • Author

    Abbasi, Shuja A. ; Takleh, O. ; Brunnschweiler, A. ; Smith, J.G.

  • Author_Institution
    University of Southampton, Department of Electronics, Southampton, UK
  • Volume
    17
  • Issue
    16
  • fYear
    1981
  • Firstpage
    578
  • Lastpage
    579
  • Abstract
    The concentration of boron diffused into silicon from a vapour source is found to be affected by the presence of masking oxide. Both spreading resistance and infra-red free-carrier emission techniques have been used to study the effect, and a decrease of about 15° in carrier concentration is observed close to the oxide-masked edge.
  • Keywords
    boron; doping profiles; elemental semiconductors; silicon; Si:B; elemental semiconductors; infra-red free-carrier emission techniques; oxide-masked edge; semiconducting doping; spreading resistance; vapour source;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810405
  • Filename
    4245880
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972475