DocumentCode
972483
Title
On the design and performance of a 6-18 GHz three-tier matrix amplifier
Author
Niclas, Karl B. ; Pereira, Ramon R.
Author_Institution
Watkins-Johnson Co., Palo Alto, CA, USA
Volume
37
Issue
7
fYear
1989
fDate
7/1/1989 12:00:00 AM
Firstpage
1069
Lastpage
1077
Abstract
A 3×3 matrix amplifier for the 6-18-GHz frequency band has been developed. Using MESFETs fabricated on VPE (vapor-phase epitaxial) material, gains of G =23.5±0.5 dB with a maximum reflection loss of RL =-10 dB were obtained from 5.2 to 18.7 GHz. Gain improvement to G =29.1±1.1 dB at a worst-case reflection loss of RL =-7.5 dB between 4.6 and 18.3 GHz when MBE (molecular-beam epitaxial) material was used for the MESFETs. In addition to the experimental results, important design considerations, especially in regard to the termination impedances of the idle ports, are discussed
Keywords
Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; -10 dB; -7.5 dB; 23 to 24 dB; 28 to 30.2 dB; 6 to 18 GHz; MBE; MESFETs; VPE; design considerations; idle ports; reflection loss; termination impedances; three-tier matrix amplifier; Bandwidth; Frequency; Helium; Impedance; MESFETs; Performance gain; Reflection; Testing; VHF circuits; Voltage-controlled oscillators;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.24550
Filename
24550
Link To Document