Title :
On the design and performance of a 6-18 GHz three-tier matrix amplifier
Author :
Niclas, Karl B. ; Pereira, Ramon R.
Author_Institution :
Watkins-Johnson Co., Palo Alto, CA, USA
fDate :
7/1/1989 12:00:00 AM
Abstract :
A 3×3 matrix amplifier for the 6-18-GHz frequency band has been developed. Using MESFETs fabricated on VPE (vapor-phase epitaxial) material, gains of G=23.5±0.5 dB with a maximum reflection loss of RL=-10 dB were obtained from 5.2 to 18.7 GHz. Gain improvement to G=29.1±1.1 dB at a worst-case reflection loss of RL=-7.5 dB between 4.6 and 18.3 GHz when MBE (molecular-beam epitaxial) material was used for the MESFETs. In addition to the experimental results, important design considerations, especially in regard to the termination impedances of the idle ports, are discussed
Keywords :
Schottky gate field effect transistors; microwave amplifiers; solid-state microwave circuits; -10 dB; -7.5 dB; 23 to 24 dB; 28 to 30.2 dB; 6 to 18 GHz; MBE; MESFETs; VPE; design considerations; idle ports; reflection loss; termination impedances; three-tier matrix amplifier; Bandwidth; Frequency; Helium; Impedance; MESFETs; Performance gain; Reflection; Testing; VHF circuits; Voltage-controlled oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
