Title :
Crystallographic facets chemically etched in GaInAsP/InP for integrated optics
Author :
Furuya, Keiichi ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
Vertical crystallographic (011) planes were exposed on (100) GaInAsP/InP double heterostructures (DH) by a newly developed chemical etchant and method. This method provides optically flat, mirror quality facets reproducibly and could be very attractive in integrated optics and optoelectronic devices.
Keywords :
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; p-n heterojunctions; semiconductor junction lasers; GaInAsP/InP double heterostructures; chemical etching; crystallographic facets; integrated optics; mirror quality facets; optoelectronic devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810410
