DocumentCode
972522
Title
Crystallographic facets chemically etched in GaInAsP/InP for integrated optics
Author
Furuya, Keiichi ; Coldren, Larry A. ; Miller, B.I. ; Rentschler, J.A.
Author_Institution
Bell Laboratories, Holmdel, USA
Volume
17
Issue
17
fYear
1981
Firstpage
582
Lastpage
583
Abstract
Vertical crystallographic (011) planes were exposed on (100) GaInAsP/InP double heterostructures (DH) by a newly developed chemical etchant and method. This method provides optically flat, mirror quality facets reproducibly and could be very attractive in integrated optics and optoelectronic devices.
Keywords
III-V semiconductors; etching; gallium arsenide; indium compounds; integrated optics; p-n heterojunctions; semiconductor junction lasers; GaInAsP/InP double heterostructures; chemical etching; crystallographic facets; integrated optics; mirror quality facets; optoelectronic devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810410
Filename
4245886
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