• DocumentCode
    972628
  • Title

    Room temperature CW operation of GaInAsP/InP double-heterostructure diode lasers emitting at 1.23 ¿m grown by low-pressure metalorganic chemical vapour deposition

  • Author

    Razeghi, M. ; Hirtz, J.P. ; Hirtz, P. ; Larivain, J.P. ; Bondeau, R. ; de Cremoux, B. ; Duchemin, J.P.

  • Author_Institution
    Thomson-CSF, Laboratoire Central de Recherches, Orsay, France
  • Volume
    17
  • Issue
    17
  • fYear
    1981
  • Firstpage
    597
  • Lastpage
    598
  • Abstract
    We report the first successful room-temperature CW operation of GaInAsP/InP DH lasers emitting at 1.23 ¿m grown by LP MOCVD. Current thresholds as low as 250 mA have been obtained for CW operation.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser transitions; semiconductor junction lasers; vapour phase epitaxial growth; 1.23 mu m; GaInAsP-InP DH diode laser; III-V semiconductors; current threshold; low-pressure metalorganic chemical vapour deposition;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810420
  • Filename
    4245896
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972628