Title :
GaAs-AlGaAs HBT with carbon doped base layer grown by MOMBE
Author :
Ren, F. ; Abernathy, C.R. ; Pearton, S.I. ; Fullowan, T.R. ; Lothian, J. ; Jordan, A.S.
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
The first demonstration of GaAS/AlGaAs HBTs grown completely by metal organic molecular beam epitaxy (MOMBE) is reported. The p-type dopant used for the base layer was carbon. Tin was used as the n-type dopant for the emitter as well as the collector. A common-emitter current gain of 140 was measured for 90 mu m diameter devices with a base doping of 1*1019 cm-3. Small area (2*6 mu m2), devices show a current gain cut-off frequency of approximately 40 GHz.
Keywords :
III-V semiconductors; aluminium compounds; carbon; gallium arsenide; heterojunction bipolar transistors; molecular beam epitaxial growth; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; tin; 40 GHz; 6 micron; 90 micron; AlGaAs:Sn; GaAS/AlGaAs HBTs; GaAs-AlGaAs; GaAs:C; GaAs:Sn; MOMBE; base doping; common-emitter current gain; current gain cut-off frequency; metal organic molecular beam epitaxy; n-type dopant; p-type dopant; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900472
