DocumentCode
972806
Title
Fully ion-implanted GaAs ICs using normally-off JFETs
Author
Kasahara, J. ; Taira, K. ; Kato, Yu ; Dohsen, M. ; Watanabe, N.
Author_Institution
Sony Corporation, Research Center, Yokohama, Japan
Volume
17
Issue
17
fYear
1981
Firstpage
621
Lastpage
623
Abstract
Fully ion-implanted normally-off-type JFET GaAs ICs were fabricated by selective ion implantation of Si directly onto a Cr-doped semi-insulating substrate for an n-active region and Zn for a p+-gate region with subsequent capless annealing in AsH3 ambient. A 15-stage ring oscillator, consisting of the DCFL logic gate with resistive load, exhibited a propagation delay time of 85 ps/gate with a power delay product of 34 fJ.
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; ion implantation; junction gate field effect transistors; oscillators; AsH3 ambient; Cr-doped semi-insulating substrate; DCFL logic gate; III-V semiconductor; Si; Zn; capless annealing; fully ion-implanted GaAs IC; normally-off JFETs; ring oscillator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810436
Filename
4245912
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