Title :
Fully ion-implanted GaAs ICs using normally-off JFETs
Author :
Kasahara, J. ; Taira, K. ; Kato, Yu ; Dohsen, M. ; Watanabe, N.
Author_Institution :
Sony Corporation, Research Center, Yokohama, Japan
Abstract :
Fully ion-implanted normally-off-type JFET GaAs ICs were fabricated by selective ion implantation of Si directly onto a Cr-doped semi-insulating substrate for an n-active region and Zn for a p+-gate region with subsequent capless annealing in AsH3 ambient. A 15-stage ring oscillator, consisting of the DCFL logic gate with resistive load, exhibited a propagation delay time of 85 ps/gate with a power delay product of 34 fJ.
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; ion implantation; junction gate field effect transistors; oscillators; AsH3 ambient; Cr-doped semi-insulating substrate; DCFL logic gate; III-V semiconductor; Si; Zn; capless annealing; fully ion-implanted GaAs IC; normally-off JFETs; ring oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810436
