Title :
High-voltage buried-channel MOS fabricated by oxygen implantation into silicon
Author :
Akiya, M. ; Ohwada, Kazunari ; Nakashima, S.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A high-voltage offset-gate buried-channel MOS made on a SOS-like substrate is described. An isolation layer is formed by an oxygen implantation process called SIMOX. A 410 V buried SiO2 breakdown voltage and a 180 V drain breakdown voltage are obtained.
Keywords :
field effect integrated circuits; insulated gate field effect transistors; integrated circuit technology; ion implantation; HV buried channel MOSFET; MOS IC; SOS-like substrate; Si:O; SiO2; drain breakdown voltage; isolation layer; separation by unplanted oxygen (SIMOX) technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810449
