Title :
An 18-34-GHz dynamic frequency divider based on 0.2-μm AlGaAs/GaAs/AlGaAs quantum-well transistors
Author :
Thiede, Andreas ; Berroth, Manfred ; Nowotny, Ulrich ; Seibel, Jorg ; Bosch, Roland ; Köhler, Klaus ; Raynor, Brian ; Schneid, Joachim
Author_Institution :
Fraunhofer Inst. for Appl. Solid-State Phys., Freiburg, Germany
fDate :
11/1/1993 12:00:00 AM
Abstract :
The design and performance of a dynamic frequency divider was presented. This digital IC demonstrates the ability of the authors´ AlGaAs/GaAs/AlGaAs quantum-well FETs with gate lengths of 0.2 μm. Stable operation was achieved in the frequency range from 18 GHz up to 34 GHz with a power consumption of 250 mW. To the authors´ knowledge, this is the best result ever reported for HEMT circuits, and is similar to the frequency limit achieved by use of AlGaAs/GaAs HBTs
Keywords :
III-V semiconductors; aluminium compounds; digital integrated circuits; field effect integrated circuits; frequency dividers; gallium arsenide; high electron mobility transistors; 0.2 micron; 18 to 34 GHz; 250 mW; AlGaAs-GaAs-AlGaAs; AlGaAs/GaAs/AlGaAs; HEMT circuits; digital IC; dynamic frequency divider; quantum-well FETs; quantum-well transistors; stable operation; Bipolar transistors; Circuits; Electron mobility; Frequency conversion; Gallium arsenide; Pulse inverters; Quantum wells; Transconductance; Variable structure systems; Wet etching;
Journal_Title :
Solid-State Circuits, IEEE Journal of
