The effect of extrinsic base encroachment on the switch-on transient of advanced narrow-emitter bipolar transistors

Author

Chuang, C.T.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

35

Issue

3

fYear

1988

fDate

3/1/1988 12:00:00 AM

Firstpage

309

Lastpage

313

Abstract

A detailed two-dimensional numerical simulations study on the switch-on transient of advanced narrow-emitter bipolar transistors is presented. Particular emphasis is placed on the effect of the `link-up´ region between the extrinsic and intrinsic bases. It is shown that, due to the nonuniform current distribution during the switch-on transient, the encroachment of the extrinsic base into the intrinsic base area causes much more severe degradation in the switching speed of the device than those predicted by DC or quasi-static AC analyses. The design considerations and scaling implications imposed by this transient phenomenon are presented

Keywords

bipolar transistors; current distribution; semiconductor device models; transients; degradation; design considerations; extrinsic base; extrinsic base encroachment; intrinsic base; link up region; narrow-emitter bipolar transistors; nonuniform current distribution; scaling implications; switch-on transient; switching speed; two-dimensional numerical simulations; Bipolar transistors; Breakdown voltage; Capacitance; Current distribution; Cutoff frequency; Degradation; Doping; Numerical simulation; Transient analysis; Tunneling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.2456

Filename

2456