Title :
High power, high brightness 2 W (200 mu m) and 3 W (500 mu m) CW AlGaAs laser diode arrays with long lifetimes
Author :
Sakamoto, M. ; Welch, D.F. ; Yao, H. ; Endriz, J.G. ; Scifres, D.R.
Author_Institution :
Spectra Diode Labs., San Jose, CA, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
Continuous-wave lifetimes in excess of ten thousand hours have been demonstrated for single-aperture AlGaAs laser diode arrays with 200 mu m and 500 mu m aperture widths at power levels of 2 and 3 W, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; reliability; semiconductor junction lasers; 10000 h; 2 W; 200 micron; 3 W; 500 micron; AlGaAs; CW lifetimes; aperture widths; high brightness laser diodes; laser diode arrays; long lifetimes; power levels; semiconductors; single-aperture;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900475
