DocumentCode :
973036
Title :
A study of the corner effect in trench-like isolated structures
Author :
Vankemmel, Rudi C. ; De Meyer, Kristin M.
Author_Institution :
IMEC, Leuven, Heverlee, Belgium
Volume :
37
Issue :
1
fYear :
1990
fDate :
1/1/1990 12:00:00 AM
Firstpage :
168
Lastpage :
176
Abstract :
In trenchlike isolated devices, several parasitic effects exist. In a real-case test simulation, two such effects are shown. The most difficult to handle is the corner effect at the convex and concave corners in the structure. The corner effect is studied for two simple structures where no other parasitic effect exists. This makes it possible to look at the controlling factors of the effect and to formulate possible solutions of the corner effect. Results show that the corner effect is very strong, even with low gate bias and oxide charge density (Qf) values. To eliminate the inversion of the convex corner, doping levels higher than 1E17/cm3 are necessary when Qf⩾1E11/cm2. It is shown that rounding the convex corner is a very effective way to eliminate the effect. However, to minimize the area loss, a compromise must be chosen between the substrate doping concentration (N sub), oxide thickness, and rounding radius. Furthermore, the carrier concentration in the corner is controlled by the neighborhood of a biased drain (well). This can have an important influence on the leakage currents along a trench. The corner effect in a concave structure seems to have a very strong pinning function on the potential. Sharp corners prevent leakage currents around a trench, even with a relatively low Nsub
Keywords :
carrier density; insulated gate field effect transistors; leakage currents; semiconductor device testing; MOSFET; area loss; biased drain; carrier concentration; concave corners; controlling factors; convex corners; corner effect; doping levels; low gate bias; oxide charge density; oxide thickness; parasitic effects; pinning function; rounding; rounding radius; sharp corners; substrate doping concentration; test simulation; trench leakage currents; trenchlike isolated devices; Bipolar transistors; Dielectrics; Insulation; Isolation technology; MOS devices; Merging; Poisson equations; Potential well; Subthreshold current; Testing;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.43814
Filename :
43814
Link To Document :
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