• DocumentCode
    973057
  • Title

    Analysis of the charge transfer of models for electrostatic discharge (ESD) and semiconductor devices

  • Author

    Greason, William D.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Western Ontario, London, Ont., Canada
  • Volume
    32
  • Issue
    3
  • fYear
    1996
  • Firstpage
    726
  • Lastpage
    734
  • Abstract
    Various models are used to simulate the electrostatic discharge (ESD) event associated with semiconductor devices; these include the human body model (HBM), the charged device model (CDM), and the field induced charged device model (FCDM). Maxwell´s method is used to analyze these models to determine device potentials and the transfer of charge during typical discharges; existing test methods are also examined. A charge injection test method is introduced which provides control of the charge transferred to the device under test; it is proposed as a means to study charge related phenomena due to ESD
  • Keywords
    electrostatic discharge; semiconductor devices; ESD; Maxwell´s method; charge injection test method; charge related phenomena; charge transfer; charged device model; electrostatic discharge; field induced charged device model; human body model; semiconductor devices; Biological system modeling; Capacitance; Charge transfer; Conductors; Electrostatic analysis; Electrostatic discharge; Humans; Maxwell equations; Semiconductor devices; Testing;
  • fLanguage
    English
  • Journal_Title
    Industry Applications, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-9994
  • Type

    jour

  • DOI
    10.1109/28.502188
  • Filename
    502188