Title :
Characterisation of a deep electron trap in molecular-beam epitaxial InP
Author :
Park, R.M. ; Stanley, C.R.
Author_Institution :
University of Glasgow, Department of Electronics and Electrical Engineering, Glasgow, UK
Abstract :
A single deep electron trap in indium phosphide grown by molecular-beam epitaxy has been characterised having a thermal activation energy of 0.59 eV and an apparent emission cross-section of 1.5×10¿12 cm2.
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; electron traps; indium compounds; molecular beam epitaxial growth; III-V semiconductors; InP; deep electron trap; molecular-beam epitaxy; thermal activation energy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810467
