Title :
Electron concentration and alloy composition dependence of Hall factor in GaxIn1¿xAsyP1¿y
Author :
Takeda, Y. ; Littlejohn, M.A. ; Hutchby, J.A. ; Trew, R.J.
Author_Institution :
North Carolina State University, Electrical Engineering Department, Raleigh, USA
Abstract :
The Hall factor is calculated by the iterative method over whole composition range of GaxIn1¿xAsyP1¿y lattice-matched to InP. The electron concentrations used are 1×1016 cm¿3 and 1×1017 cm¿3, with carrier compensation ratios (ND+NA/n 1, 2, and 5, which are commonly observed in grown GaInAsP alloys. The Hall factor decreases with increasing alloy content y for relatively low electron concentrations, but this is not the case in compensated alloys because of varying predominance of scattering mechanisms with composition and ionised impurity concentration.
Keywords :
Hall effect; III-V semiconductors; carrier density; gallium arsenide; gallium compounds; indium compounds; GaxIn1-xAsyP1-y; Hall factor; II-V semiconductors; alloy composition; electron concentration; ionised impurity concentration; iterative method; scattering mechanisms;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810480
