Title :
Improved mobility in OM-VPE-grown Ga1¿xInxAs
Author :
Dietze, W.T. ; Ludowise, M.J. ; Cooper, C.B.
Author_Institution :
Varian Associates, Inc., Solid State Laboratory, Palo Alto, USA
Abstract :
The use of a tirmethylindium-trimethylarsenic adduct, which is synthesised in the gas phase, as the In source, and AsH3 as the primary As source is reported for the growth of high-quality Ga1¿xInxAs (x<0.20). The improved epitaxial layers have higher mobilities and lower background doping than those grown with trimethylarsenic as the sole As source. The effects of elevated growth temperatures are also reported.
Keywords :
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; semiconductor epitaxial layers; vapour phase epitaxial growth; AsH3; III-V semiconductors; In source; OM-VPE-grown Ga1-xInxAs; electron mobility; trimethylindium-trimethylarsenic adduct;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810488
