DocumentCode
973339
Title
Improved mobility in OM-VPE-grown Ga1¿xInxAs
Author
Dietze, W.T. ; Ludowise, M.J. ; Cooper, C.B.
Author_Institution
Varian Associates, Inc., Solid State Laboratory, Palo Alto, USA
Volume
17
Issue
19
fYear
1981
Firstpage
698
Lastpage
699
Abstract
The use of a tirmethylindium-trimethylarsenic adduct, which is synthesised in the gas phase, as the In source, and AsH3 as the primary As source is reported for the growth of high-quality Ga1¿xInxAs (x<0.20). The improved epitaxial layers have higher mobilities and lower background doping than those grown with trimethylarsenic as the sole As source. The effects of elevated growth temperatures are also reported.
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; indium compounds; semiconductor epitaxial layers; vapour phase epitaxial growth; AsH3; III-V semiconductors; In source; OM-VPE-grown Ga1-xInxAs; electron mobility; trimethylindium-trimethylarsenic adduct;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810488
Filename
4245966
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