• DocumentCode
    973350
  • Title

    Novel low temperature RF plasma annealing using NH3-N2 gas mixture

  • Author

    Aite, K. ; Ragay, F.W. ; Middelhoek, J.

  • Author_Institution
    IC Technol. & Electron. Lab., Twente Univ., Enschede, Netherlands
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    733
  • Lastpage
    734
  • Abstract
    A novel low temperature (350 degrees C) RF plasma technique using a NH3-N2 gas mixture was used to anneal bipolar structures. Vertical p-n-p transistors made with high energy ion implantation and possessing poor electrical characteristics have been dramatically improved after 30 min annealing with this new technique. The value of the ideality factor of the base current which was about 1.4 before annealing approached the ideal value of 1.0 after 30 min annealing.
  • Keywords
    annealing; bipolar transistors; semiconductor technology; 30 min; 350 degC; N; NH 3-N 2 gas mixture; RF plasma annealing; bipolar structures; high energy; implantation; low temperature; semiconductor device processing; vertical p-n-p transistors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900478
  • Filename
    106047
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973350