Title :
In0.53Ga0.47As contact layer for 1.3 ¿m light-emitting diodes
Author :
Temkin, H. ; Chin, A.K. ; Digiuseppe, M.A.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
Measurements of the specific contact resistance on epitaxially grown layers of p-In1¿xGaxAsyP1¿y as a function of composition demonstrate the resistance minimum of 7×10¿6 ¿cm2 for In0.53Ga0.47As. Growth procedures for the preparation of InGaAsP/InP double-heterostructure LED wafers incorporating such a ternary InGaAs contact layer are described. This contacting technique allows fabrication of high-performance devices with reproducibly low series resistance.
Keywords :
III-V semiconductors; contact resistance; gallium arsenide; indium compounds; light emitting diodes; p-n heterojunctions; semiconductor epitaxial layers; In0.53Ga0.47As contact layers; InGaAsP/InP double-heterostructure LED wafers; LED; contact resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810493
