Title :
InP Gunn oscillators in V-band
Author :
Sowers, J.J. ; Janis, B.A. ; Crowley, J.D. ; Fank, F.B.
Author_Institution :
Varian Associates, Palo Alto, USA
Abstract :
Output powers of 200 mW and efficiencies up to 6.5% have been achieved with CW InP Gunn oscillators in V-band (50¿75 GHz). Fixed frequency as well as frequency tunable oscillators have been developed. Tuning bandwidths of 19% and 6.1% have been achieved with mechanical and varactor tuning, respectively.
Keywords :
Gunn oscillators; III-V semiconductors; indium compounds; III-V semiconductor; InP Gunn oscillators; V-band; frequency tunable oscillators; mechanical tuning; tuning bandwidth; varactor tuning;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810496
