• DocumentCode
    973472
  • Title

    Low-threshold stripe geometry lasers by metalorganic chemical vapour deposition (MO-CVD)

  • Author

    Burnham, R.D. ; Scifres, D.R. ; Streifer, W.

  • Author_Institution
    Xerox Palo Alto Research Center, Palo Alto, USA
  • Volume
    17
  • Issue
    19
  • fYear
    1981
  • Firstpage
    714
  • Lastpage
    715
  • Abstract
    We report low-threshold MO-CVD-grown GaAlAs DH (8260 Å) lasers with shallow proton implantation delineated stripe widths of 4, 6 and 8 mm. At room temperature, a 125 ¿m device with a 6 ¿m stripe exhibited a 31 mA threshold and operated kink-free up to 15 mW/facet with a differential efficiency of 76%.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAlAs DH lasers; III-V semiconductor; low threshold stripe geometry lasers; metalorganic chemical vapour deposition; shallow proton implantation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810501
  • Filename
    4245979
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973472