Title :
Low-threshold stripe geometry lasers by metalorganic chemical vapour deposition (MO-CVD)
Author :
Burnham, R.D. ; Scifres, D.R. ; Streifer, W.
Author_Institution :
Xerox Palo Alto Research Center, Palo Alto, USA
Abstract :
We report low-threshold MO-CVD-grown GaAlAs DH (8260 Å) lasers with shallow proton implantation delineated stripe widths of 4, 6 and 8 mm. At room temperature, a 125 ¿m device with a 6 ¿m stripe exhibited a 31 mA threshold and operated kink-free up to 15 mW/facet with a differential efficiency of 76%.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; GaAlAs DH lasers; III-V semiconductor; low threshold stripe geometry lasers; metalorganic chemical vapour deposition; shallow proton implantation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810501
