Title :
Mn as a p-type dopant in In0.53Ga0.47As on InP substrates
Author :
Chand, N. ; Houston, P.A. ; Robson, P.N.
Author_Institution :
University of Sheffield, Department of Electronic & Electrical Engineering, Sheffield, UK
Abstract :
Mn has been used as a p-type dopant in LPE In0.53Ga0.47As. The distribution coefficient was measured as 0.6 and the activation energy was 52.5±2.5 meV. The room temperature mobility varied from 183 to 94 cm2 V¿1s¿1 in the concentration range studied. A solid to solid diffusion coefficient of 2.6×10¿12 cm2 s¿1 was estimated for Mn into the substrate at 640°C.
Keywords :
III-V semiconductors; carrier mobility; diffusion in solids; doping profiles; gallium arsenide; indium compounds; manganese; semiconductor doping; In0.53Ga0.47As; InP substrates; LPE; Mn dopant; activation energy; distribution coefficient; p-type dopant; room temperature mobility; semiconductor; solid to solid diffusion coefficient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810510
