Characteristics of a coplanar waveguide HEMT mount on GaAs substrate

Author

Mirshekar-Syahkal, D. ; Pote, A.

Author_Institution

Dept. of Electron. Syst. Eng., Essex Univ., Colchester, UK

Volume

41

Issue

9

fYear

1993

fDate

9/1/1993 12:00:00 AM

Firstpage

1494

Lastpage

1498

Abstract

In a special integrated coplanar waveguide HEMT mount, designed for a wide band (1-60 GHz) on-wafer measurement of the characteristics of HEMTs on GaAs, significant power loss as high as 30% of the input power over a range of frequencies is observed. This power loss is mainly attributed to the radiation through two via holes connecting the coplanar waveguide ground planes to the backside metallization in the mount. Based on this assumption, an approximate theoretical model is developed to substantiate the experimental observations

Keywords

III-V semiconductors; MMIC; S-parameters; field effect integrated circuits; gallium arsenide; integrated circuit technology; metallisation; microstrip lines; microwave measurement; 1 to 60 GHz; GaAs; GaAs substrate; HEMT mount; MMIC technology; backside metallization; ground planes; integrated coplanar waveguide; on-wafer measurement; power loss; via holes; Coplanar waveguides; Frequency measurement; Gallium arsenide; HEMTs; Joining processes; Loss measurement; Metallization; Planar waveguides; Power measurement; Wideband;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.245667

Filename

245667