A 2.5 nJ/bit 0.65 V Pulsed UWB Receiver in 90 nm CMOS

Author

Lee, Fred S. ; Chandrakasan, Anantha P.

Author_Institution

Rambus, Inc., Los Altos

Volume

42

Issue

12

fYear

2007

Firstpage

2851

Lastpage

2859

Abstract

A noncoherent 0-16.7 Mb/s ultra-wideband (UWB) receiver using 3-5 GHz subbanded pulse-position modulation (PPM) signaling is implemented in a 90 nm CMOS process. The RF and mixed-signal baseband circuits operate at 0.65 V and 0.5 V, respectively. Using duty-cycling, adjustable bandpass filters, and a relative-compare baseband, the receiver achieves 2.5 nJ/bit at 10^-3 BER with -99 dBm best case sensitivity at 100 kb/s. The energy efficiency is maintained across three orders of magnitude in data rate. For data rates less than 10 kb/s, leakage power dominates energy/bit.

Keywords

CMOS integrated circuits; band-pass filters; error statistics; pulse position modulation; receivers; ultra wideband communication; BER; CMOS; RF circuits; adjustable bandpass filters; frequency 3 GHz to 5 GHz; mixed-signal baseband circuits; pulse-position modulation; pulsed UWB receiver; size 90 nm; ultra-wideband receiver; voltage 0.65 V; Band pass filters; Baseband; Bit error rate; CMOS process; Circuits; Energy efficiency; Pulse modulation; Radio frequency; Signal processing; Ultra wideband technology; Adjustable bandpass filter; energy/bit; interference mitigation; low voltage; low-noise amplifier (LNA); mixed- signal; passive mixer; phase-splitter; receiver; relative-compare baseband demodulator; sensitivity; system; ultra-wideband (UWB);

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/JSSC.2007.908723

Filename

4381454