Comments on GaAs MESFET baseband-to-microwave passive switches

Author

Gutmann, R.J. ; Jain, Nikhil

Author_Institution

Rensselaer Polytech. Inst., Troy, NY, USA

Volume

37

Issue

7

fYear

1989

fDate

7/1/1989 12:00:00 AM

Firstpage

1154

Lastpage

1155

Abstract

In two recent publications on broadband passive GaAS MESFET switches (ibid., vol.36, no.12, p.1604-13, Dec. 1988 and IEEE Trans. Electron. Devices, vol.ED-34, p.2595-602, Dec. 1987), M.J. Schindler et al. presented the low-power, low-frequency characteristics of these useful components. While complete characteristics were presented over the microwave spectrum, power-handling capability was not presented below 3 GHz. The commenters emphasize that the power-handling capability, as well as related nonlinearities such as total harmonic distortion, degrades significantly at lower frequencies in previously reported GaAs MESFET switches, and they expect similar characteristics in these recently reported switches as well. While this power-handling reduction is not significant for most RF and microwave users, there are negative implications for broadband, baseband applications such as instrumentation and signal processing.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; semiconductor switches; solid-state microwave devices; GaAs; baseband applications; baseband-to-microwave passive switches; instrumentation; low-frequency characteristics; power-handling capability; signal processing; total harmonic distortion; Baseband; Degradation; Electrons; Gallium arsenide; Instruments; MESFETs; Microwave devices; Radio frequency; Switches; Total harmonic distortion;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.24567

Filename

24567