Author :
Narasimha, Adithyaram ; Analui, Behnam ; Liang, Yi ; Sleboda, Thomas J. ; Abdalla, Sherif ; Balmater, Erwin ; Gloeckner, Steffen ; Guckenberger, Drew ; Harrison, Mark ; Koumans, Roger G M P ; Kucharski, Daniel ; Mekis, Attila ; Mirsaidi, Sina ; Song, Dan
Abstract :
Optical and electronic building blocks required for DWDM transceivers have been integrated in a 0.13 mum CMOS SOI technology. Using these building blocks, a 4 x 10-Gb/s single-chip DWDM optoelectronic transceiver with 200 GHz channel spacing has been demonstrated. The DWDM transceiver demonstrates an unprecedented level of optoelectronic system integration, bringing all required optical and electronic transceiver functions together on a single SOI substrate. An aggregate data rate of 40 Gb/s was achieved over a single fiber, with a BER of less than 10-12 and a power consumption of 3.5 W.
Keywords :
CMOS integrated circuits; channel spacing; error statistics; integrated optoelectronics; optical communication equipment; silicon-on-insulator; wavelength division multiplexing; BER; CMOS SOI technology; SOI substrate; bit rate 40 Gbit/s; channel spacing; electronic building blocks; electronic transceiver; frequency 200 GHz; fully integrated DWDM optoelectronic transceiver; optical building blocks; optical transceiver; optoelectronic system integration; power 3.5 W; power consumption; CMOS technology; Costs; Integrated optics; Optical attenuators; Optical devices; Optical receivers; Optical transmitters; Silicon; Transceivers; Wavelength division multiplexing; CMOS optoelectronic transceiver; high-speed integrated circuits; integrated optical interleaver; photonic integrated circuits; silicon photonics; wavelength division multiplexing;
