Title :
Photocurrent saturation in short-period superlattice modulators
Author :
Goossen, K.W. ; Zucker, J.E. ; Jospeh, I.-Bar ; Kuo, J.M. ; Kopf, R.M. ; Miller, David A. B. ; Chemla
Author_Institution :
AT & T Bell Labs., Holmdel, NJ, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
The effects of high intensity illumination on short-period superlattice modulators at room temperature are examined using photocurrent techniques. The authors; measurements indicate a zero bias saturation intensity of 6.5 kW/cm2, considerably higher than in conventional quantum well structures with thick approximately 100 AA barriers, but lower for quantum wells with thin barriers. For moderate DC bias the change in photocurrent with applied voltage remains high even at high intensity. This implies that superlattices are useful as high-intensity optical modulators.
Keywords :
electro-optical devices; optical modulation; photoconductivity; semiconductor superlattices; DC bias; applied voltage; high intensity illumination; high-intensity optical modulators; photocurrent saturation; room temperature; short-period superlattice modulators; zero bias saturation intensity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900480