Title :
Multiple-Ramp Column-Parallel ADC Architectures for CMOS Image Sensors
Author :
Snoeij, Martijn F. ; Theuwissen, Albert J P ; Makinwa, Kofi A A ; Huijsing, Johan H.
Author_Institution :
Texas Instrum. Deutschland GmbH, Erlangen
Abstract :
This paper presents a CMOS imager with a column-parallel ADC architecture based on a multiple-ramp single-slope (MRSS) ADC. Like the well-known column-level single-slope ADC, an MRSS ADC uses a very simple analog column circuit, which mainly consists of an analog comparator and some switches. A prototype imager using the MRSS ADC architecture was realized in a 0.25 CMOS process. Measurements demonstrate that the conversion speed of an MRSS ADC is 3.3 higher than a single-slope ADC while dissipating only 16% more power. Furthermore, the MRSS ADC can be easily adapted to exhibit a companding characteristic, which exploits the amplitude-dependent nature of the photon shot noise present in imager signals. Measurements show that the resulting multiple-ramp multiple-slope ADC is 25% faster than an MRSS ADC while dissipating the same amount of power.
Keywords :
CMOS image sensors; analogue circuits; analogue-digital conversion; CMOS image sensors; analog column circuit; analog comparator; multiple-ramp column-parallel ADC; photon shot noise; CMOS image sensors; Clocks; Image converters; Image resolution; Instruments; Optical sensors; Optoelectronic and photonic sensors; Power measurement; Switches; Switching circuits; A/D conversion; CMOS image sensors; column-level ADC; multiple-ramp single-slope (MRSS) ADC; photon shot noise; single-slope ADC;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.2007.908720