• DocumentCode
    973686
  • Title

    Bistable operation of semiconductor lasers by optical injection

  • Author

    Kawaguchi, Hitoshi

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    741
  • Lastpage
    742
  • Abstract
    Bistable operation in InP/InGaAsP DH lasers by optical injection is reported for the first time. An incident optical beam, generated by a conventional DH semiconductor laser, was injected into the semiconductor laser with inhomogeneous excitation. Bistability has been achieved in the relation between input intensity of the incident beam and the optical output intensity of the inhomogeneously excited laser. The bistable laser also acts as an optical limiter, i.e. the optical output completely saturates above the laser threshold level.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InP-InGaAsP DH lasers; bistable laser; bistable operation; incident optical beam; inhomogeneous excitation; input intensity; optical injection; optical limiter; optical output intensity; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810521
  • Filename
    4246000