DocumentCode
973686
Title
Bistable operation of semiconductor lasers by optical injection
Author
Kawaguchi, Hitoshi
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
17
Issue
20
fYear
1981
Firstpage
741
Lastpage
742
Abstract
Bistable operation in InP/InGaAsP DH lasers by optical injection is reported for the first time. An incident optical beam, generated by a conventional DH semiconductor laser, was injected into the semiconductor laser with inhomogeneous excitation. Bistability has been achieved in the relation between input intensity of the incident beam and the optical output intensity of the inhomogeneously excited laser. The bistable laser also acts as an optical limiter, i.e. the optical output completely saturates above the laser threshold level.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; InP-InGaAsP DH lasers; bistable laser; bistable operation; incident optical beam; inhomogeneous excitation; input intensity; optical injection; optical limiter; optical output intensity; semiconductor lasers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810521
Filename
4246000
Link To Document