DocumentCode
973696
Title
Picosecond pulse propagation on coplanar striplines fabricated on lossy semiconductor substrates: modeling and experiments
Author
Son, Joo-Hiuk ; Wang, Hsi-Huai ; Whitaker, John F. ; Mourou, Gerard A.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Volume
41
Issue
9
fYear
1993
fDate
9/1/1993 12:00:00 AM
Firstpage
1574
Lastpage
1580
Abstract
A simple model for the propagation of high-frequency signals on coplanar striplines with lossy semiconductor substrates is proposed and demonstrated. This model incorporates the effect of a conductive substrate through the loss tangent in a distributed-circuit analysis extended to high frequencies. Very strong attenuation and dispersion due to the substrate are observed even when the GaAs conductance is only 1 mho/cm, corresponding to a doping density of around 1015 cm -3. The accuracy of this model is tested with a direct comparison to experimental data of picosecond pulse propagation on a doped GaAs coplanar stripline (CPS) measured in the time domain using the electro-optic (EO) sampling technique. Good agreement is found in terms of the attenuation and phase velocity of the distorted pulses at four propagation distances up to 300 μm. The pulse propagation on a multiple modulation-doped layer is also studied experimentally as a prototype of high-frequency signal propagation on the gate of a modulation-doped field-effect transistor (MODFET). The attenuation shows linear frequency dependence up to 1.0 THz, contrary to the cubic or quadratic dependence of coplanar transmission lines on low-loss substrates
Keywords
dielectric losses; dispersion (wave); distributed parameter networks; gallium arsenide; high electron mobility transistors; strip lines; substrates; transmission line theory; 1 THz; 1 mho; GaAs; GaAs conductance; MODFET; attenuation; conductive substrate; coplanar striplines; dispersion; distributed-circuit analysis; doped GaAs coplanar stripline; doping density; electro-optic sampling technique; high-frequency signals; loss tangent; lossy semiconductor substrates; modeling; modulation-doped field-effect transistor; multiple modulation-doped layer; phase velocity; picosecond pulse propagation; Attenuation; Doping; Epitaxial layers; Frequency; Gallium arsenide; Propagation losses; Pulse measurements; Semiconductor process modeling; Stripline; Substrates;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.245680
Filename
245680
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