DocumentCode :
973711
Title :
Numerical simulation of solar cell open circuit voltage decay
Author :
Casta¿¿er, L. ; Llaber¿¿a, J. ; Garrido, Juan ; Vilamaj¿¿, E.
Author_Institution :
Escuela Técnica Superior de Ingenieros de Telecomunicación, Barcelona, Spain
Volume :
17
Issue :
20
fYear :
1981
Firstpage :
745
Lastpage :
747
Abstract :
A numerical simulation of the open circuit voltage decay of junction solar cells has been done including a double exponential model for DC I(V) characteristics and dynamic capacitive effects arising from quasineutral and space-charge regions
Keywords :
semiconductor device models; solar cells; DC I-V characteristics; double exponential model; dynamic capacitive effects; junction solar cells; numerical simulation; quasineutral region; solar cell open circuit voltage decay; space-charge regions;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19810524
Filename :
4246003
Link To Document :
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